IPB048N15N5ATMA1 - Infineon Technologies

Manufacturer Part Number

IPB048N15N5ATMA1

Manufacturer

Infineon Technologies

Introduction

This product is a high-performance N-channel MOSFET from Infineon Technologies, part of the OptiMOS series.

Product Features and Performance

150V drain-to-source voltage rating

Ultra-low on-resistance of 4.8mOhm @ 60A, 10V

Continuous drain current rating of 120A at 25°C case temperature

Wide operating temperature range of -55°C to 175°C

High power dissipation capability of 300W at Tc

Product Advantages

Excellent power efficiency due to ultra-low on-resistance

Robust and reliable performance across wide temperature range

High current handling capability in a compact TO-263 package

Key Technical Parameters

Drain-to-Source Voltage (Vdss): 150V

Gate-to-Source Voltage (Vgs): ±20V

On-Resistance (Rds(on)): 4.8mOhm @ 60A, 10V

Continuous Drain Current (Id): 120A @ 25°C

Input Capacitance (Ciss): 7800pF @ 75V

Power Dissipation (Tc): 300W

Quality and Safety Features

RoHS3 compliant

Designed and manufactured to high quality standards

Compatibility

This MOSFET is suitable for a wide range of power conversion and control applications.

Application Areas

Switching power supplies

Motor drives

Industrial automation and control

Renewable energy systems

Product Lifecycle

This product is currently in production and there are no plans for discontinuation. Replacement or upgrade options are available if required.

Key Reasons to Choose This Product

Exceptional power efficiency and performance

Robust and reliable operation across wide temperature range

High current handling capability in a compact package

Designed and manufactured to high quality standards

Compatibility with a wide range of power applications