Manufacturer Part Number
IPB049NE7N3GATMA1
Manufacturer
Infineon Technologies
Introduction
High-performance N-channel MOSFET transistor
Part of the Infineon OptiMOS series
Product Features and Performance
Designed for high-efficiency power conversion applications
Optimized for low on-resistance and high switching speed
Capable of handling high current and voltage
Product Advantages
Excellent thermal management and low power dissipation
Fast switching and low gate charge for efficient operation
Robust and reliable design for long-term use
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 75V
On-Resistance (Rds(on)): 4.9mΩ @ 80A, 10V
Continuous Drain Current (Id): 80A @ 25°C
Operating Temperature: -55°C to 175°C
Quality and Safety Features
RoHS3 compliant
Qualified for automotive and industrial applications
Protective features include over-temperature and overcurrent protection
Compatibility
Surface mount package (TO-263-3, D-Pak)
Suitable for a wide range of power conversion and control applications
Application Areas
Switching power supplies
Motor drives
Power inverters and converters
General industrial and automotive power electronics
Product Lifecycle
Currently in active production
No plans for discontinuation, long-term availability expected
Key Reasons to Choose This Product
Excellent power efficiency and thermal management
Robust and reliable design for demanding applications
High current handling and fast switching capabilities
Proven performance in a wide range of power electronics systems
