Manufacturer Part Number
IPB052N04NG
Manufacturer
Infineon Technologies
Introduction
High-performance N-channel MOSFET transistor for power management applications
Product Features and Performance
Low on-resistance (RDS(on)) of 5.2 mΩ @ 70 A, 10 V
High current rating of 70 A continuous drain current (ID) at 25°C
Wide operating temperature range of -55°C to 175°C
Low input capacitance (Ciss) of 3300 pF @ 20 V
Low gate charge (Qg) of 42 nC @ 10 V
Product Advantages
Excellent power efficiency and thermal management
Reliable and robust performance
Suitable for high-current, high-power applications
Key Technical Parameters
Drain-to-Source Voltage (VDS): 40 V
Gate-to-Source Voltage (VGS): ±20 V
Threshold Voltage (VGS(th)): 4 V @ 33 A
Power Dissipation (PD): 79 W at Tc
Quality and Safety Features
RoHS3 compliant
Suitable for surface mount (SMD) applications
Compatibility
Suitable for various power management and control applications
Application Areas
Power supplies
Motor drives
Industrial automation
Automotive electronics
Product Lifecycle
Currently available
No known plans for discontinuation
Key Reasons to Choose This Product
Excellent power efficiency and thermal performance
High current handling capability
Wide operating temperature range
Reliable and robust design
Suitable for high-power, high-current applications