Manufacturer Part Number
IPB054N08N3GATMA1
Manufacturer
Infineon Technologies
Introduction
This product is a high-performance N-channel MOSFET transistor from Infineon Technologies, part of the OptiMOS series.
Product Features and Performance
80V drain-source voltage rating
80A continuous drain current rating at 25°C
Low on-resistance of 5.4mΩ at 80A, 10V
High power dissipation of 150W at case temperature
Wide operating temperature range of -55°C to 175°C
Product Advantages
Excellent performance-to-cost ratio
High power density and efficiency
Suitable for a wide range of power conversion applications
Key Technical Parameters
Vdss: 80V
Vgs (max): ±20V
Rds(on) (max): 5.4mΩ @ 80A, 10V
Id (continuous): 80A @ 25°C
Ciss (max): 4750pF @ 40V
Qg (max): 69nC @ 10V
Quality and Safety Features
RoHS 3 compliant
PG-TO263-3 package for surface mount assembly
Compatibility
This MOSFET is compatible with a wide range of power electronic circuits and systems.
Application Areas
Switch-mode power supplies
Motor drivers
Inverters
DC-DC converters
General power management applications
Product Lifecycle
This product is an active and widely available part from Infineon Technologies. Replacements and upgrades may be available in the future.
Key Reasons to Choose This Product
Excellent performance-to-cost ratio
High power density and efficiency
Wide operating temperature range
Suitable for a variety of power conversion applications
RoHS 3 compliant for environmental compliance
