Manufacturer Part Number
IPB048N06LG
Manufacturer
Infineon Technologies
Introduction
Discrete Semiconductor Product
Transistor FET, MOSFET Single
Product Features and Performance
60V Drain to Source Voltage
±20V Gate to Source Voltage
7mΩ Drain-Source On-Resistance @ 100A, 10V
100A Continuous Drain Current @ 25°C
7600pF Input Capacitance @ 30V
300W Power Dissipation (Max) @ Tc
N-Channel MOSFET
2V Gate Threshold Voltage @ 270A
225nC Gate Charge @ 10V
Product Advantages
High current capability
Low on-resistance
Compact DPak package
Wide temperature range (-55°C to 175°C)
Key Technical Parameters
Drain to Source Voltage: 60V
Gate to Source Voltage: ±20V
Drain-Source On-Resistance: 4.7mΩ
Continuous Drain Current: 100A
Input Capacitance: 7600pF
Power Dissipation: 300W
FET Type: N-Channel MOSFET
Gate Threshold Voltage: 2V
Gate Charge: 225nC
Quality and Safety Features
RoHS3 compliant
Reliable surface mount package (TO-263-3)
Compatibility
Compatible with various electronic circuits and systems that require high-power switching
Application Areas
Power supplies
Motor drives
Industrial automation
Electric vehicles
Renewable energy systems
Product Lifecycle
Currently available product
No known plans for discontinuation
Replacement parts and upgrades may be available
Several Key Reasons to Choose This Product
High current capability up to 100A
Low on-resistance of 4.7mΩ for efficient power conversion
Wide operating temperature range of -55°C to 175°C
Compact and reliable DPak package for surface mount applications
Suitable for a wide range of high-power switching applications
IPB042N10N3Cypress Semiconductor (Infineon Technologies)