Manufacturer Part Number
IKQ120N60TXKSA1
Manufacturer
Infineon Technologies
Introduction
The IKQ120N60TXKSA1 is a high-performance single IGBT (Insulated Gate Bipolar Transistor) from Infineon Technologies.
Product Features and Performance
Trench Field Stop IGBT technology
High power density with a maximum power of 833W
Low conduction and switching losses
Fast switching speed with short turn-on and turn-off times
Wide operating temperature range of -40°C to 175°C
Product Advantages
Improved energy efficiency
Compact design
Reliable and robust performance
Key Technical Parameters
Collector-Emitter Breakdown Voltage (max): 600V
Collector Current (max): 160A
Collector-Emitter Saturation Voltage (max): 2V
Reverse Recovery Time: 241ns
Quality and Safety Features
RoHS3 compliant
Suitable for harsh environmental conditions
Compatibility
The IKQ120N60TXKSA1 is compatible with a wide range of industrial and power electronics applications.
Application Areas
Motor drives
Power supplies
Welding equipment
Induction heating systems
Uninterruptible power supplies (UPS)
Product Lifecycle
The IKQ120N60TXKSA1 is an active product and is not nearing discontinuation. Replacement or upgrade options are available from Infineon Technologies.
Key Reasons to Choose This Product
High-efficiency performance with low losses
Robust and reliable design
Suitability for a wide range of applications
Availability of replacement and upgrade options
Excellent technical support from Infineon Technologies