Manufacturer Part Number
IKD15N60R
Manufacturer
Infineon Technologies
Introduction
Discrete Semiconductor Device
Transistor IGBT Single
Product Features and Performance
Trench IGBT technology
600V Collector-Emitter Breakdown Voltage
30A Collector Current (max)
1V Collector-Emitter Saturation Voltage @ 15V, 15A
110ns Reverse Recovery Time
90nC Gate Charge
45A Pulsed Collector Current
900μJ Switching Energy
16ns/183ns Turn-on/Turn-off Delay Times
Product Advantages
Efficient power conversion
High switching performance
Compact and space-saving design
Key Technical Parameters
Voltage Rating: 600V
Current Rating: 30A
Power Rating: 250W
Operating Temperature: -40°C to 175°C
Quality and Safety Features
Trench IGBT technology for high reliability
Tested to automotive-grade quality standards
Compatibility
Standard IGBT input type
Compatible with common gate drive circuits
Application Areas
Power supplies
Motor drives
Inverters
Converters
Product Lifecycle
Current production model
Replacements and upgrades may be available in the future
Key Reasons to Choose
High power density and efficiency
Fast switching performance
Robust and reliable design
Compatibility with common applications
