Manufacturer Part Number
IKD06N60R
Manufacturer
Infineon Technologies
Introduction
Discrete Semiconductor Products - Transistors - IGBTs - Single
Product Features and Performance
Trench IGBT Technology
600V Collector-Emitter Breakdown Voltage
12A Maximum Collector Current
1V Maximum Collector-Emitter Saturation Voltage
68ns Reverse Recovery Time
48nC Gate Charge
18A Maximum Pulsed Collector Current
330μJ Switching Energy
12ns/127ns Turn-on/Turn-off Delay Time
Product Advantages
High Voltage and Current Capability
Low Conduction and Switching Losses
Fast Switching Speed
Compact TO-252-3 (D-Pak) Package
Key Technical Parameters
Voltage Collector Emitter Breakdown (Max): 600V
Current Collector (Ic) (Max): 12A
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 6A
Reverse Recovery Time (trr): 68ns
Gate Charge: 48nC
Current Collector Pulsed (Icm): 18A
Switching Energy: 330μJ
Td (on/off) @ 25°C: 12ns/127ns
Quality and Safety Features
Operating Temperature Range: -40°C to 175°C
Power Rating: 100W
Robust Trench IGBT Technology
Tape & Reel Packaging
Compatibility
Compatible with Standard IGBT Gate Drive Circuits
Application Areas
Power Conversion
Motor Drives
Renewable Energy Systems
Uninterruptible Power Supplies (UPS)
Industrial Electronics
Product Lifecycle
Currently in Production
No Discontinuation or Upgrade Information Available
Key Reasons to Choose This Product
High Voltage and Current Capability for Demanding Applications
Low Conduction and Switching Losses for Improved Efficiency
Fast Switching Speed for High-Frequency Operation
Compact TO-252-3 (D-Pak) Package for Space-Constrained Designs
Robust Trench IGBT Technology for Reliable Performance
Compatibility with Standard IGBT Gate Drive Circuits for Easy Integration
IKD04N60RACypress Semiconductor (Infineon Technologies)