IKD06N60R - Infineon Technologies

Manufacturer Part Number

IKD06N60R

Manufacturer

Infineon Technologies

Introduction

Discrete Semiconductor Products - Transistors - IGBTs - Single

Product Features and Performance

Trench IGBT Technology

600V Collector-Emitter Breakdown Voltage

12A Maximum Collector Current

1V Maximum Collector-Emitter Saturation Voltage

68ns Reverse Recovery Time

48nC Gate Charge

18A Maximum Pulsed Collector Current

330μJ Switching Energy

12ns/127ns Turn-on/Turn-off Delay Time

Product Advantages

High Voltage and Current Capability

Low Conduction and Switching Losses

Fast Switching Speed

Compact TO-252-3 (D-Pak) Package

Key Technical Parameters

Voltage Collector Emitter Breakdown (Max): 600V

Current Collector (Ic) (Max): 12A

Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 6A

Reverse Recovery Time (trr): 68ns

Gate Charge: 48nC

Current Collector Pulsed (Icm): 18A

Switching Energy: 330μJ

Td (on/off) @ 25°C: 12ns/127ns

Quality and Safety Features

Operating Temperature Range: -40°C to 175°C

Power Rating: 100W

Robust Trench IGBT Technology

Tape & Reel Packaging

Compatibility

Compatible with Standard IGBT Gate Drive Circuits

Application Areas

Power Conversion

Motor Drives

Renewable Energy Systems

Uninterruptible Power Supplies (UPS)

Industrial Electronics

Product Lifecycle

Currently in Production

No Discontinuation or Upgrade Information Available

Key Reasons to Choose This Product

High Voltage and Current Capability for Demanding Applications

Low Conduction and Switching Losses for Improved Efficiency

Fast Switching Speed for High-Frequency Operation

Compact TO-252-3 (D-Pak) Package for Space-Constrained Designs

Robust Trench IGBT Technology for Reliable Performance

Compatibility with Standard IGBT Gate Drive Circuits for Easy Integration