Manufacturer Part Number
IKD04N60R
Manufacturer
Infineon Technologies
Introduction
High-performance trench IGBT transistor with a voltage rating of 600V and a current rating of 8A.
Product Features and Performance
Trench IGBT technology for high efficiency and low conduction losses
Operating temperature range of -40°C to 175°C
Low on-state voltage (Vce(on)) of 2.1V at 15V gate voltage and 4A collector current
Fast switching with a turn-on time of 14ns and turn-off time of 146ns
Low reverse recovery time of 43ns
Power rating of 75W
Product Advantages
Excellent performance characteristics for efficient power conversion applications
Compact and easy to integrate TO-252-3 package
Suitable for a wide range of applications including motor drives, power supplies, and inverters
Key Technical Parameters
Voltage rating: 600V
Current rating: 8A continuous, 12A pulsed
Trench IGBT technology
TO-252-3 package
Operating temperature range: -40°C to 175°C
Quality and Safety Features
Robust and reliable design for industrial and automotive applications
Meets relevant safety and quality standards
Compatibility
Compatible with standard IGBT gate drive circuits
Application Areas
Motor drives
Power supplies
Inverters
Industrial and automotive electronics
Product Lifecycle
Current product, not nearing discontinuation
Replacement or upgraded models may become available in the future
Key Reasons to Choose This Product
Excellent performance characteristics for efficient power conversion
Compact and easy to integrate TO-252-3 package
Wide operating temperature range and high reliability for industrial and automotive applications
Suitable for a variety of power conversion applications
IKD06N60RA K06R60ACypress Semiconductor (Infineon Technologies)