Manufacturer Part Number
IKD04N60RF
Manufacturer
Infineon Technologies
Introduction
Discrete Semiconductor Product
Transistor IGBT Single
Product Features and Performance
Trench IGBT technology
Optimized for high-frequency switching applications
Low conduction and switching losses
Fast switching speed
Low gate charge
Excellent short circuit robustness
Product Advantages
Improved energy efficiency
Reduced system size and cost
Reliable and robust performance
Key Technical Parameters
Collector-Emitter Breakdown Voltage: 600V
Collector Current (Max): 8A
Collector-Emitter Saturation Voltage (Max): 2.5V
Reverse Recovery Time: 34ns
Gate Charge: 27nC
Operating Temperature: -40°C to 175°C
Quality and Safety Features
Stringent quality control measures
Compliance with safety standards
Compatibility
Compatible with various power electronics applications
Application Areas
Switch-mode power supplies
Motor drives
Inverters
Welding equipment
Induction heating
Product Lifecycle
Currently available
Replacement or upgrade options may be available in the future
Key Reasons to Choose This Product
Excellent energy efficiency
Fast switching performance
Robust and reliable operation
Compact and cost-effective solution
Wide operating temperature range