Manufacturer Part Number
IKD06N60RFATMA1
Manufacturer
Infineon Technologies
Introduction
Discrete Semiconductor Product
Single Transistor IGBT (Insulated Gate Bipolar Transistor)
Product Features and Performance
RoHS3 Compliant
TrenchStop IGBT Technology
Surface Mount Packaging (TO-252-3, DPak)
Wide Operating Temperature Range: -40°C to 175°C
High Power Capability: 100W
Fast Switching Speeds: 7ns (turn-on), 106ns (turn-off)
Low Collector-Emitter Saturation Voltage: 2.5V @ 15V, 6A
Reverse Recovery Time: 48ns
Product Advantages
Efficient power conversion
Reliable performance
Compact surface mount package
Key Technical Parameters
IGBT Type: Trench Field Stop
Collector-Emitter Breakdown Voltage: 600V
Collector Current (Max): 12A, Pulsed Current: 18A
Gate Charge: 48nC
Switching Energy: 90μJ (on), 90μJ (off)
Quality and Safety Features
RoHS3 Compliant
Wide Operating Temperature Range
Compatibility
Surface Mount Package (TO-252-3)
Application Areas
Power Conversion
Motor Drives
Renewable Energy Systems
Industrial Controls
Product Lifecycle
Current product, no indication of discontinuation
Replacements and upgrades available from Infineon Technologies
Key Reasons to Choose
High performance IGBT technology
Efficient power handling
Reliable and safe operation
Compact surface mount packaging
Wide application compatibility
