Manufacturer Part Number
CY7C2663KV18-550BZI
Manufacturer
Infineon Technologies
Introduction
The CY7C2663KV18-550BZI is a high-performance QDR II+ SRAM memory designed for advanced telecommunications and networking systems.
Product Features and Performance
Memory Type: Volatile SRAM
Memory Format: Synchronous, QDR II+
Memory Size: 144Mbit
Memory Organization: 8M x 18
Memory Interface: Parallel
Clock Frequency: 550 MHz
Voltage Supply Range: 1.7V to 1.9V
Operating Temperature: -40°C to 85°C
Package: 165-LBGA surface mount
Product Advantages
High clock frequency for faster data processing
Wide operating temperature suited for extreme environments
Compact 165-LBGA package for space-sensitive applications
Key Technical Parameters
Clock Frequency: 550 MHz
Memory Size: 144Mbit
Voltage Supply: 1.7V ~ 1.9V
Operating Temperature: -40°C ~ 85°C
Quality and Safety Features
Rigorous quality control measures ensuring reliability and durability
Compliance with industry safety and environmental standards
Compatibility
Compatible with systems requiring high-speed SRAM with parallel memory interface
Application Areas
Telecommunications
Networking Systems
High-speed data processing systems
Product Lifecycle
Status: Active
Not nearing discontinuation; replacements and upgrades available
Several Key Reasons to Choose This Product
Exceptionally high clock speed enhances system performance
Stability and performance in extreme temperature conditions
Compact package enables integration in space-limited setups
Reliable product supported by Infineon Technologies' robust customer service and technical assistance
Future-proof investment with available upgrades and long product lifecycle