Manufacturer Part Number
CY7C2663KV18-450BZXC
Manufacturer
Infineon Technologies
Introduction
High-speed Synchronous Quad Data Rate II+ (QDR II+) SRAM
Product Features and Performance
Increased data throughput with QDR II+ technology
144-Mbit memory capacity
8M x 18 memory organization
450 MHz clock frequency for high-performance applications
Advanced SRAM technology
Parallel memory interface
Surface mount 165-LBGA package
Reliable operation within standard temperature range 0°C to 70°C
Product Advantages
Optimized for high-speed computing and networking tasks
Low latency and high data bandwidth
Volatility ensures fast access times
Compatible with a wide range of supply voltages from 1.7V to 1.9V
QDR II+ offers improved functionality over previous generations
Key Technical Parameters
Memory Type: Volatile SRAM
Technology: Synchronous QDR II+
Size: 144Mbit
Organisation: 8M x 18
Frequency: 450 MHz
Supply Voltage: 1.7V to 1.9V
Operating Temperature: 0°C to 70°C
Mounting Type: Surface Mount
Package: 165-LBGA
Quality and Safety Features
Robust LBGA package for secure mounting
Manufactured by Infineon Technologies, renowned for quality and reliability
Compatibility
Compatible with various systems requiring high-speed volatile memory
Tray packaging suitable for standard manufacturing processes
Application Areas
Networking equipment
High-performance computing
Data storage systems
Telecommunications infrastructure
Product Lifecycle
Active product with ongoing manufacturer support
Possible future upgrades to higher densities or speeds as technology advances
Several Key Reasons to Choose This Product
High-speed memory allowing faster data processing
Increased system performance due to reduced data bottlenecks
Flexible voltage range accommodating different system power designs
Stable operation through a standard temperature range, ensuring reliability
Manufactured by a reputable leader in semiconductor technology
Advanced QDR II+ interface aiding in future-proofing your system design