Manufacturer Part Number
CY7C2644KV18-300BZXI
Manufacturer
Infineon Technologies
Introduction
High-speed Synchronous Quad Data Rate II+ SRAM
Product Features and Performance
Volatile memory
SRAM - Synchronous, QDR II+ technology
144Mbit memory size
4M x 36 memory organization
Parallel memory interface
300 MHz clock frequency
Surface mount 165-LBGA
Product Advantages
High bandwidth and low latency
Efficient data transfer with the QDR architecture
Suited for high-speed applications
Key Technical Parameters
Memory Type: Volatile
Memory Format: SRAM
Memory Size: 144Mbit
Memory Organization: 4M x 36
Clock Frequency: 300 MHz
Voltage - Supply: 1.7V ~ 1.9V
Operating Temperature: -40°C ~ 85°C
Quality and Safety Features
Operating temperature range suitable for industrial applications
Stringent production standards of Infineon Technologies
Compatibility
Compatible with high-speed digital systems requiring fast SRAM
165-FBGA (15x17) package suitable for surface mount technology
Application Areas
Networking equipment
High-performance computing
Telecommunications infrastructure
Data storage systems
Product Lifecycle
Product Status: Active
Ongoing manufacturer support
Several Key Reasons to Choose This Product
High-speed data access and throughput
Reliability in extreme temperature conditions
Infineon Technologies' reputation for quality and innovation
Broad compatibility with high-speed digital interfaces
Ideal for advanced, performance-demanding applications
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