Manufacturer Part Number
CY7C2644KV18-333BZI
Manufacturer
Infineon Technologies
Introduction
The CY7C2644KV18-333BZI is a high-performance, low-power Quad Data Rate II+ (QDR II+) synchronous SRAM with a 144Mbit storage capacity. Designed for networking, telecommunications, and other high-speed applications, this SRAM offers fast access times, high bandwidth, and reliable operation across a wide temperature range.
Product Features and Performance
144Mbit storage capacity
4M x 36 memory organization
Parallel memory interface
333MHz clock frequency
7V to 1.9V operating voltage
-40°C to 85°C operating temperature range
Surface mount package (165-LBGA)
Product Advantages
High-speed performance with QDR II+ synchronous SRAM technology
Low power consumption for energy-efficient operation
Wide operating temperature range for use in diverse environments
Reliable and stable performance with Infineon's quality manufacturing
Key Reasons to Choose This Product
Exceptional speed and bandwidth for demanding networking and telecommunications applications
Proven reliability and longevity from a trusted semiconductor manufacturer
Flexible design with surface mount packaging and wide temperature tolerance
Cost-effective solution for high-performance SRAM requirements
Quality and Safety Features
Rigorous quality control and testing during manufacturing
Compliance with industry safety and environmental standards
Compatibility
This SRAM is designed for use in a variety of networking, telecommunications, and other high-speed digital systems that require high-performance, low-power volatile memory.
Application Areas
Networking equipment (routers, switches, etc.)
Telecommunications infrastructure (base stations, switches, etc.)
High-performance computing and data processing systems
Industrial control and automation equipment
Product Lifecycle
The CY7C2644KV18-333BZI is currently in a last time buy (LTB) phase. Customers are advised to contact our website's sales team for information on available equivalent or alternative models.