CY7C2665KV18-450BZI - Cypress Semiconductor

Manufacturer Part Number

CY7C2665KV18-450BZI

Manufacturer

Infineon Technologies

Introduction

The CY7C2665KV18-450BZI is a high-performance, high-density SRAM (Synchronous Static Random Access Memory) chip from Infineon Technologies. It is designed for applications that require fast and reliable data storage and retrieval, such as network equipment, telecommunications systems, and industrial automation.

Product Features and Performance

Memory Type: Volatile SRAM

Memory Format: SRAM

Technology: SRAM Synchronous, QDR II+

Memory Size: 144Mbit

Memory Organization: 4M x 36

Memory Interface: Parallel

Clock Frequency: 450 MHz

Write Cycle Time Word, Page: -

Voltage Supply: 1.7V ~ 1.9V

Operating Temperature: -40°C ~ 85°C (TA)

Product Advantages

High-speed performance with up to 450 MHz clock frequency

Large memory capacity of 144Mbit

Synchronous SRAM technology for reliable and efficient data access

Wide operating temperature range of -40°C to 85°C

Key Reasons to Choose This Product

Ideal for applications requiring fast and reliable data storage and retrieval

Excellent performance and high memory capacity

Suitable for a wide range of operating temperatures

Trusted Infineon Technologies brand and quality

Quality and Safety Features

Robust and reliable design

Meets industry standards and certifications

Undergoes rigorous testing and quality control

Compatibility

The CY7C2665KV18-450BZI is compatible with a variety of electronic devices and systems that require high-performance SRAM.

Application Areas

Network equipment

Telecommunications systems

Industrial automation

Military and aerospace applications

Medical devices

Consumer electronics

Product Lifecycle

["The CY7C2665KV18-450BZI is an active product and is currently available.","There are no direct equivalent or alternative models available from Infineon Technologies at this time.","For more information or to discuss alternative options, please contact our website's sales team."]