Manufacturer Part Number
CY7C1312KV18-250BZI
Manufacturer
Infineon Technologies
Introduction
The CY7C1312KV18-250BZI is a high-performance, 18Mbit Quad Data Rate II (QDR II) SRAM memory device. It is designed for use in networking, telecommunications, and other high-speed applications that require fast, reliable data storage and retrieval.
Product Features and Performance
18Mbit storage capacity
Synchronous SRAM (SSRAM) technology
QDR II interface with 250MHz clock frequency
1M x 18 memory organization
Parallel memory interface
7V to 1.9V operating voltage range
Wide -40°C to +85°C operating temperature range
165-LBGA surface mount package
Product Advantages
High-speed data access and transfer rates
Excellent performance and reliability
Low power consumption
Wide operating temperature range
Key Reasons to Choose This Product
Optimized for high-speed networking and telecommunication applications
Proven Infineon Technologies quality and reliability
Supports a wide range of operating conditions
Cost-effective solution for demanding memory requirements
Quality and Safety Features
Rigorously tested to ensure consistent quality and performance
Complies with industry safety and environmental standards
Compatibility
The CY7C1312KV18-250BZI is designed to be compatible with a wide range of networking and telecommunications equipment, as well as other high-speed digital systems.
Application Areas
Networking equipment (routers, switches, etc.)
Telecommunications infrastructure
High-speed digital signal processing
Military and aerospace systems
Industrial automation and control systems
Product Lifecycle
The CY7C1312KV18-250BZI is an active product, and there are currently no plans for discontinuation. Infineon Technologies offers a range of alternative and equivalent SRAM memory products that may be suitable for your application. If you have any questions or need further assistance, please contact our website's sales team.
CY7C1313AV18-250BZCCypress Semiconductor