Manufacturer Part Number
CY7C1312KV18-300BZXC
Manufacturer
Infineon Technologies
Introduction
The CY7C1312KV18-300BZXC is a high-speed SRAM memory chip designed for rapid data access and processing.
Product Features and Performance
Volatile memory type indicating temporary data storage
Utilizes Synchronous, QDR II SRAM technology for faster access and transfer speeds
Features a memory size of 18Mbit and an organization of 1M x 18
Parallel memory interface supports high-speed data operations
Clock frequency at a high rate of 300 MHz
Product Advantages
Fast access and processing capabilities suitable for high-performance applications
Reliable data retention within operational temperature range of 0°C ~ 70°C
Key Technical Parameters
Memory Size: 18Mbit
Memory Organization: 1M x 18
Clock Frequency: 300 MHz
Voltage Supply: 1.7V ~ 1.9V
Operating Temperature: 0°C ~ 70°C
Quality and Safety Features
Operates stably within a commercial temperature range ensuring reliability
Constructed in a 165-LBGA package for robust mounting and protection
Compatibility
Parallel interface allows for integration with a variety of microprocessors and microcontrollers
Application Areas
Suitable for networking and telecommunications
Ideal for high-speed caching applications and real-time processing systems
Product Lifecycle
Currently active with no announced discontinuation, ensuring ongoing availability
Several Key Reasons to Choose This Product
High clock frequency enabling rapid data processing
Support for advanced SRAM technology ensuring efficient operation and high speed
Sturdy package design offering reliability and durability in various applications
Ongoing product lifecycle status ensures long-term availability and support