CY7C1312CV18-250BZXC - Infineon Technologies

Manufacturer Part Number

CY7C1312CV18-250BZXC

Manufacturer

Infineon Technologies

Introduction

The CY7C1312CV18-250BZXC is a high-performance, low-power SRAM memory device with a capacity of 18Mbit. It is designed for a wide range of applications, including networking, telecommunications, and embedded systems.

Product Features and Performance

Synchronous SRAM with Quad Data Rate II (QDR II) technology

Memory size of 18Mbit, organized as 1M x 18

Parallel memory interface

Clock frequency of 250MHz

Low operating voltage of 1.7V to 1.9V

Operating temperature range of 0°C to 70°C

Product Advantages

High-speed and low-latency performance for demanding applications

Low power consumption for energy-efficient operation

Reliable and durable design for long-term use

Compatibility with a wide range of systems and platforms

Key Reasons to Choose This Product

Exceptional performance and efficiency for critical applications

Proven reliability and long-term durability

Seamless integration with a variety of systems and architectures

Cost-effective solution for memory requirements

Quality and Safety Features

Rigorous quality control and testing processes

Compliance with industry standards and regulations

Robust design for reliable and safe operation

Compatibility

The CY7C1312CV18-250BZXC is compatible with a wide range of electronic systems and platforms that require high-performance SRAM memory.

Application Areas

Networking and telecommunications equipment

Embedded systems and industrial automation

Military and aerospace applications

High-performance computing and data processing

Product Lifecycle

The CY7C1312CV18-250BZXC is an obsolete product, meaning it is no longer in active production. However, there may be equivalent or alternative models available from Infineon Technologies or other manufacturers. Customers are advised to contact our website's sales team for more information on compatible products and availability.