Manufacturer Part Number
CY7C1312KV18-250BZC
Manufacturer
Infineon Technologies
Introduction
High-performance synchronous SRAM (QDRⅡ) integrated circuit
Product Features and Performance
18Mbit memory capacity
1M x 18 memory organization
250MHz clock frequency
Parallel memory interface
Volatile memory type
Synchronous SRAM (QDRⅡ) technology
Product Advantages
High-speed performance for demanding applications
Reliable and stable operation
Space-efficient 165-FBGA (13x15) package
Key Technical Parameters
7V ~ 1.9V supply voltage
0°C ~ 70°C operating temperature range
RoHS non-compliant
Quality and Safety Features
Thorough quality control and testing by Infineon
Compatibility
Suitable for a wide range of applications requiring high-speed synchronous SRAM
Application Areas
Networking equipment
Telecommunications systems
High-performance computing
Data processing and storage devices
Product Lifecycle
Currently available, no plans for discontinuation
Upgrade and replacement options may be available in the future
Key Reasons to Choose This Product
Exceptional performance and speed for demanding applications
Reliable and stable operation
Efficient use of board space with compact 165-FBGA (13x15) package
Extensive quality control and testing by a reputable manufacturer, Infineon Technologies
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