Manufacturer Part Number
CY7C1313BV18-250BZC
Manufacturer
Infineon Technologies
Introduction
The CY7C1313BV18-250BZC is a high-performance, low-power, synchronous SRAM (Quad Data Rate II) memory chip with a capacity of 18Mbit. It is designed for applications that require fast and reliable data storage and retrieval, such as networking equipment, telecommunications systems, and high-performance computing.
Product Features and Performance
18Mbit memory capacity
Synchronous SRAM technology with Quad Data Rate II (QDR II) interface
Parallel memory interface
250MHz clock frequency
7V to 1.9V operating voltage range
0°C to 70°C operating temperature range
165-LBGA package
Product Advantages
High-speed data access and transfer
Low power consumption
Reliable and stable performance
Compact and space-efficient package
Key Reasons to Choose This Product
Ideal for high-performance applications that require fast and reliable data storage
Supports Quad Data Rate II (QDR II) interface for efficient data transfer
Low power consumption, making it suitable for power-sensitive applications
Proven reliability and stability from a reputable manufacturer, Infineon Technologies
Quality and Safety Features
Manufactured using high-quality materials and processes to ensure reliability and durability
Complies with relevant industry standards and safety regulations
Compatibility
Compatible with a wide range of networking, telecommunications, and high-performance computing systems
Application Areas
Networking equipment (routers, switches, etc.)
Telecommunications systems (base stations, switches, etc.)
High-performance computing (servers, workstations, etc.)
Product Lifecycle
["This product is classified as Obsolete, meaning it is no longer in active production and may be discontinued.","There may be equivalent or alternative memory solutions available from Infineon Technologies or other manufacturers. Customers are advised to contact our website's sales team for more information on current product offerings and availability."]