CY7C1049GN30-10ZSXIT - Infineon Technologies

Manufacturer Part Number

CY7C1049GN30-10ZSXIT

Manufacturer

Infineon Technologies

Introduction

High-speed 4Mbit SRAM memory chip designed for volatile memory solutions

Product Features and Performance

4Mbit memory capacity

Asynchronous SRAM technology

512K x 8 memory organization

Fast access time of 10 ns

10ns write cycle time for efficient performance

Parallel memory interface

Product Advantages

Optimized for high-speed applications

Wide voltage range support from 2.2V to 3.6V

Suitable for operating temperatures ranging from -40°C to 85°C

Surface mount packaging for compact design integration

Key Technical Parameters

Memory Type: Volatile SRAM

Memory Size: 4Mbit

Access Time: 10 ns

Voltage Supply: 2.2V to 3.6V

Operating Temperature: -40°C to 85°C

Package: 44-TSOP II

Quality and Safety Features

Robust temperature range ensures operation in harsh conditions

Meets strict quality standards of Infineon Technologies

Compatibility

Designed for use in systems requiring high-performance volatile memory

Compatible with various microcontrollers and processors with a parallel interface

Application Areas

Embedded systems

Telecommunications

Networking hardware

Computer peripherals

Industrial controls

Product Lifecycle

Currently active product

Availability of replacements or upgrades should be verified with manufacturer for future-proofing

Reasons to Choose This Product

Infineon Technologies' reputation for reliable and durable components

Swift data access speed and writing cycle

Broad compatibility for versatile use in different applications

Comprehensive support for varied environments with its wide temperature and voltage ranges

Surface mount TSOP packaging for easy integration into design systems