CY7C1059DV33-10ZSXI - Infineon Technologies

Manufacturer Part Number

CY7C1059DV33-10ZSXI

Manufacturer

Infineon Technologies

Introduction

The CY7C1059DV33-10ZSXI is a high-speed CMOS Static Random Access Memory (SRAM) designed for memory-intensive applications.

Product Features and Performance

8Mbit SRAM storage capacity

Asynchronous SRAM technology

Parallel memory interface

Fast access and write cycle times of 10ns

Supports a wide range of operating voltages from 3V to 3.6V

Product Advantages

Robust temperature operational range from -40°C to 85°C

High-speed access suitable for performance-critical applications

Adequate storage size for various data-intensive tasks

Key Technical Parameters

Memory Type: Volatile

Memory Format: SRAM

Memory Size: 8Mbit

Memory Organization: 1M x 8

Access Time: 10 ns

Voltage Supply: 3V ~ 3.6V

Operating Temperature: -40°C ~ 85°C

Quality and Safety Features

Compliance with stringent industrial standards for memory products

Constructed for reliability in various environmental conditions

Compatibility

Compatible with systems requiring 44-TSOP II package memory modules

Surface mount design for firm attachment to circuit boards

Application Areas

Ideal for integrated high-speed memory solutions in networking, telecommunications, and embedded systems

Product Lifecycle

This product is listed as Obsolete

Potential purchasers should consider alternatives or last-time buys

Replacement or upgrading options should be looked into

Several Key Reasons to Choose This Product

High-speed SRAM with 10 ns access and write cycle time for quick data manipulation

Operational across a wide temperature range making it suitable for industrial and automotive applications

Large 8Mbit memory capacity meets needs for extensive data storage situations

Infineon's reputation for manufacturing reliable and robust memory products