CY7C10612DV33-10ZSXI - Infineon Technologies

Manufacturer Part Number

CY7C10612DV33-10ZSXI

Manufacturer

Infineon Technologies

Introduction

High-speed 16Mbit SRAM Memory Chip

Product Features and Performance

Volatile SRAM Memory

Asynchronous SRAM Technology

High-density 16Mbit Storage

Parallel Memory Interface

Fast Write Cycle Time – 10ns

Quick Access Time – 10ns

Product Advantages

Designed for High Speed

Large Memory Organization for Advanced Processes – 1M x 16

Key Technical Parameters

Memory Size: 16Mbit

Memory Organization: 1M x 16

Write Cycle Time: 10ns

Access Time: 10ns

Supply Voltage: 3V to 3.6V

Operating Temperature Range: -40°C to 85°C

Quality and Safety Features

Conforms to Infineon’s Quality and Reliability Standards

Compatibility

Compatible with Systems Requiring 54-TSOP II Package

Suitable for Surface Mount Technology

Application Areas

High-performance Computing

Communication Infrastructure

Automotive Electronics

Industrial Automation

Product Lifecycle

Obsolete Product

Potential Need for Replacements or Upgrades

Several Key Reasons to Choose This Product

Cutting-edge Speed for High-frequency Operations

Robust Storage Capacity for Complex Processes

Adaptable to a Broad Range of Industrial Applications

Proven Reliability for Critical Systems

Operational in a Wide Temperature Range for Harsh Environments

Easy Integration with Surface Mount Technologies