Manufacturer Part Number
CY7C1061DV33-10ZSXI
Manufacturer
Infineon Technologies
Introduction
CY7C1061DV33-10ZSXI is a high-performance SRAM memory device designed for fast data storage and retrieval operations.
Product Features and Performance
Volatile memory type
Asynchronous SRAM technology
Memory size of 16Mbit organized as 1M x 16
Parallel memory interface
Fast access and write cycle time of 10 ns
Product Advantages
High-speed data storage and access
Efficient parallel interface for quick data transfer
Durable construction suitable for demanding applications
Key Technical Parameters
Memory Size: 16Mbit
Memory Organization: 1M x 16
Write Cycle Time Word, Page: 10ns
Access Time: 10 ns
Voltage Supply: 3V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Quality and Safety Features
Robust surface mount TSOP package
Operating temperature range ensures stability under varying environmental conditions
Compatibility
Compatible with devices requiring parallel interface SRAM with similar voltage and speed specifications
Application Areas
Embedded systems
High-speed computing applications
Industrial electronics
Telecommunication systems
Product Lifecycle
Obsolete status with potential availability of replacements or upgrades
Several Key Reasons to Choose This Product
Extremely fast access and write times for efficient operations
High reliability and durability under extreme conditions
Optimized for high-performance applications requiring quick data access and storage
Strong compatibility with various high-speed digital applications
Obsolete status ensures focus on obtaining more advanced substitutes, maintaining technology updates