Manufacturer Part Number
CY7C1061G30-10ZXE
Manufacturer
Infineon Technologies
Introduction
High Speed 16Mbit SRAM chip for volatile memory applications
Product Features and Performance
Volatile SRAM Memory
Asynchronous SRAM Technology
16Mbit Storage Capacity
Parallel Memory Interface
Fast Write Cycle Time and Access Time at 10ns
Wide Voltage Supply Range from 2.2V to 3.6V
Product Advantages
Fast access and write speeds for high-performance computing tasks
Robust operating temperature range suitable for industrial applications
Compatible with surface mount technology for compact PCB designs
Key Technical Parameters
Memory Size: 16Mbit
Organization: 1M x 16
Access Time: 10 ns
Supply Voltage: 2.2V to 3.6V
Operating Temperature: -40°C to 125°C
Quality and Safety Features
Operational over wide temperature range ensuring reliability in various environments
Compliance with industry standards for SRAM memory chips
Compatibility
Compatible with devices requiring high-speed memory interfaces
Designed for PCBs utilizing Surface Mount Technology with 48-TSOP I Package
Application Areas
Industrial automation systems
Networking and telecommunication
High-performance computing
Consumer electronics
Product Lifecycle
Active product stage, not near discontinuation
Future replacements or upgrades may include higher density memories or faster access types
Several Key Reasons to Choose This Product
Memory chip optimized for high data throughput
Durable design suitable for demanding applications
Infineon’s reputation for manufacturing high-quality semiconductor products
Enhanced system performance through fast memory access times
Broad compatibility with modern electronics hardware systems
Commitment to long-term product availability and support
CY7C1061BV33-12ZICypress Semiconductor
CY7C1061DV33-10BVJXICypress Semiconductor CorpIC SRAM 16MBIT PARALLEL 48VFBGA
CY7C1062GN30-10BGXIInfineon TechnologiesIC SRAM 16MBIT PARALLEL 119PBGA