Manufacturer Part Number
CY7C1061G30-10BV1XI
Manufacturer
Infineon Technologies
Introduction
The CY7C1061G30-10BV1XI is a high-performance Volatile SRAM manufactured by Infineon Technologies, designed to meet the extensive needs of high-speed data storage and manipulation.
Product Features and Performance
Volatile SRAM Asynchronous technology
High-speed access time of 10 ns
Write Cycle Time for both Word and Page at 10ns
Organized as 1M x 16, providing a memory size of 16Mbit
Surface Mount 48-VFBGA packaging
Operating Temperature ranges from -40°C to 85°C
Product Advantages
Fast access and write times enhance system performance
High-density memory organization suitable for rigorous applications
Robust thermal management supporting a wide range of operating temperatures
Compact and efficient packaging suitable for dense circuit designs
Key Technical Parameters
Memory Size: 16Mbit
Memory Format: SRAM
Memory Organization: 1M x 16
Access Time: 10 ns
Voltage Supply: 2.2V ~ 3.6V
Operating Temperature: -40°C ~ 85°C
Quality and Safety Features
Compliance with industry-standard safety and quality norms
Extensive testing across enhanced temperature ranges
Compatibility
Compatible with a wide range of microcontrollers and processors supporting Parallel memory interface
Application Areas
Telecommunications
Networking hardware
Computer systems
Automotive electronics
Industrial control systems
Product Lifecycle
The product status is active
No immediate discontinuation, with ongoing support and potential future upgrades available
Several Key Reasons to Choose This Product
Exceptionally quick access and write cycle times boosting overall system responsiveness
Suitable for operation in extreme conditions due to its temperature resilience
Wide compatibility with existing technology infrastructure
Reliable performance backed by Infineon Technologies' expertise in memory solutions
Future-proof investment with active product status and potential upgrade paths