CY7C1061GN30-10ZSXI - Infineon Technologies

Manufacturer Part Number

CY7C1061GN30-10ZSXI

Manufacturer

Infineon Technologies

Introduction

The CY7C1061GN30-10ZSXI is a high-performance SRAM device designed for applications requiring fast access and high data reliability.

Product Features and Performance

SRAM - Asynchronous technology

Memory Size of 16Mbit

Parallel memory interface

Fast access time of 10 ns

Write Cycle Time of 10 ns per word or page

Product Advantages

Offers high-speed operation

Reliable data retention with volatile memory format

Stable performance across a wide voltage range from 2.2V to 3.6V

Key Technical Parameters

Memory Type: Volatile SRAM

Memory Format: SRAM - Asynchronous

Memory Size: 16Mbit

Memory Organization: 1M x 16

Access Time: 10 ns

Voltage - Supply: 2.2V ~ 3.6V

Operating Temperature: -40°C ~ 85°C

Quality and Safety Features

Robust construction in a 54-TSOP II package

Designed for surface mount technology

Operates effectively in extreme temperature conditions

Compatibility

Compatible with devices requiring a parallel memory interface and TSOP mounting

Application Areas

Ideal for computing applications

Useful in networking and telecommunication equipment

Applicable in industrial and automotive systems

Product Lifecycle

The product is currently active

No indicated discontinuation, ensuring long-term availability

Several Key Reasons to Choose This Product

Rapid access and write times enhance system performance

High memory density beneficial for advanced applications

Wide operating temperature range suits various environments

Reliability in voltage fluctuation conditions

Supported by Infineon Technologies' reputable service and quality