Manufacturer Part Number
CY7C1069AV33-10ZXI
Manufacturer
infineon-technologies
Introduction
The CY7C1069AV33-10ZXI is a high-speed CMOS Static Random Access Memory (SRAM) component from Infineon Technologies, designed for memory-intensive applications requiring fast access times and high data reliability.
Product Features and Performance
Volatile memory type ensuring temporary data storage
Asynchronous SRAM technology for independent read/write operations
16Mbit memory size offering ample storage capacity
2M x 8 memory organization for efficient data management
Parallel memory interface enabling quick data transfer
10ns write cycle time and access time for rapid responses
Operates on a 3V ~ 3.6V supply voltage for compatibility with low voltage systems
Surface mount 54-TSOP II package for compact integration
Product Advantages
High-speed access and write times enhance system performance
Large data storage capacity suitable for demanding applications
Low-voltage operation supports energy-efficient designs
Robust operating temperature range of -40°C ~ 85°C ensures reliability in harsh conditions
Key Technical Parameters
Memory Type: Volatile SRAM - Asynchronous
Memory Size: 16Mbit
Memory Organization: 2M x 8
Access Time: 10ns
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: -40°C ~ 85°C
Quality and Safety Features
Designed according to Infineon's rigorous quality standards for reliability and performance
Operates effectively within a wide temperature range, ensuring device safety under varying environmental conditions
Compatibility
Compatible with systems requiring parallel interface volatile memory
Suitable for various applications in electronics that need high-speed, temporary data storage
Application Areas
High-performance computing systems
Telecommunications equipment
Networking hardware
Embedded systems requiring quick data access
Product Lifecycle
Obsolete status indicating the model is no longer manufactured
Potential availability of replacements or upgrades should be checked with Infineon Technologies
Several Key Reasons to Choose This Product
Exceptional speed with 10ns access and write cycle times enhances system responsiveness
High-density memory capacity addresses the needs of data-intensive applications
Energy-efficient operation supports the design of sustainable electronics
Wide operating temperature range increases reliability in extreme conditions
Support from Infineon Technologies ensures access to top-tier technical assistance and potential upgrade paths
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