CY7C1062GN30-10BGXI - Infineon Technologies

Manufacturer Part Number

CY7C1062GN30-10BGXI

Manufacturer

Infineon Technologies

Introduction

The CY7C1062GN30-10BGXI is a high-performance SRAM device from Infineon Technologies, designed for high-speed data storage and retrieval in advanced computing systems.

Product Features and Performance

Volatile Memory Type: Retains information as long as power is supplied

Memory Format: Asynchronous SRAM for quick access and operation

Memory Size: 16Mbit provides ample storage for applications

Memory Organization: 512K x 32 for structured data management

Write Cycle Time: 10ns facilitates rapid data handling and processing

Access Time: 10 ns ensures swift data retrieval

Operating Temperature: -40°C ~ 85°C allows functionality in extreme conditions

Product Advantages

High-speed access and processing capabilities

Robust temperature tolerance

Large memory capacity for complex applications

Key Technical Parameters

Memory Interface: Parallel

Voltage Supply: 2.2V ~ 3.6V

Packaging: Tray

Mounting Type: Surface Mount

Package / Case: 119-BGA

Supplier Device Package: 119-PBGA (14x22)

Quality and Safety Features

Designed to operate reliably within a wide temperature range

Encased in a sturdy 119-BGA package for enhanced durability

Compatibility

Compatible with systems requiring high-speed, large size SRAM with a parallel interface

Application Areas

Suitable for advanced computing, networking, and telecommunication systems

Ideal for high-speed data acquisition and processing applications

Product Lifecycle

Status: Active

Not nearing discontinuation, with continued manufacturer support and availability

Several Key Reasons to Choose This Product

Exceptional data handling speed with 10 ns access time and write cycle

High memory capacity suitable for demanding applications

Durable and reliable under extreme environmental conditions

Broad compatibility with advanced electronic systems requiring robust SRAM storage solutions