Manufacturer Part Number
CY7C1049DV33-10ZSXIT
Manufacturer
Infineon Technologies
Introduction
Asynchronous SRAM with 4Mbit storage, designed for high-speed applications requiring volatile memory.
Product Features and Performance
4Mbit memory size
512K x 8 organization
Parallel memory interface
Asynchronous SRAM technology
10ns write cycle time
10ns access time
3V to 3.6V supply voltage range
Operational temperature range from -40°C to 85°C
Surface mount 44-TSOP II package
Product Advantages
High-speed access and write capabilities
Robust temperature performance for diverse environments
Optimal for parallel computing systems due to parallel interface
Compatible with a wide range of operating voltages
Key Technical Parameters
Memory Type: Volatile SRAM
Memory Format: SRAM - Asynchronous
Memory Size: 4Mbit
Memory Organization: 512K x 8
Write Cycle Time: 10ns
Access Time: 10 ns
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: -40°C ~ 85°C
Package Type: 44-TSOP II
Quality and Safety Features
Designed to meet stringent quality and safety standards for volatile memory applications
Reliable operation across a wide range of temperatures
Compatibility
Compatible with systems requiring fast parallel SRAM
Mountable on surfaces with 44-TSOP II package specifications
Application Areas
High-speed computing
Telecommunications
Industrial electronics
Gaming
Medical equipment
Product Lifecycle
Obsolete product status
Potential replacements or upgrades may be available from Infineon Technologies
Several Key Reasons to Choose This Product
Exceptional data access and writing speed of 10ns
Wide operating temperature range fit for harsh operating environments
Stable performance across a range of supply voltages
Ease of integration with standard TSOP-sized mounting
Backed by Infineon Technologies' legacy of quality in semiconductor manufacturing
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