Manufacturer Part Number
CY7C1049D-10VXIT
Manufacturer
Infineon Technologies
Introduction
High-speed 4Mbit SRAM memory component designed for fast access and high bandwidth applications
Product Features and Performance
Volatile memory with quick access time
Asynchronous SRAM Technology
4Mbit storage capacity
Organized as 512K x 8 for optimal data organization
Parallel memory interface for straightforward integration
Fast write cycle time and access time of 10ns
Product Advantages
Optimized for speed-critical applications
Reliable data storage in a high-bandwidth context
Easy integration into system design due to parallel interface
Key Technical Parameters
Memory Type: Volatile SRAM
Memory Size: 4Mbit
Memory Organization: 512K x 8
Write Cycle Time: 10ns
Access Time: 10ns
Supply Voltage: between 4.5V and 5.5V
Operating Temperature range of -40°C to 85°C
Quality and Safety Features
Designed for operation in harsh environments with a wide temperature range
Constructed following stringent industry standards for quality and reliability
Compatibility
Compatible with systems requiring high-speed parallel memory access
Fits surface mount technology (SMT) with a 36-BSOJ package
Application Areas
Can be used in high-performance computing, telecommunications, and networking hardware along with other speed-sensitive digital applications
Product Lifecycle
Obsolete product status, suggesting the component is no longer being manufactured or stocked
Future replacements or upgrades may be necessary
Several Key Reasons to Choose This Product
Ultra-fast access and write times ideal for real-time applications
High reliability and durability in extreme conditions
Easy to integrate due to standard supply voltages and parallel interface
Manufactured by a reputable supplier in the semiconductor industry, Infineon Technologies
Built for demanding environments and offers a sizeable 4Mbit memory in a compact SMT package