Manufacturer Part Number
CY7C1049GN30-10ZSXI
Manufacturer
Infineon Technologies
Introduction
High-speed 4Mbit SRAM
Product Features and Performance
Volatile Memory Type
Asynchronous SRAM Technology
4Mbit Memory Size
512K x 8 Memory Organization
Parallel Memory Interface
10ns Write Cycle Time
10ns Access Time
2V to 3.6V Supply Voltage Range
Operating Temperature from -40°C to 85°C
Product Advantages
High-speed Access Time
Wide Voltage Range Operation
Extended Temperature Range for Industrial Applications
Reliable Data Retention in Volatile Memory Operations
Key Technical Parameters
SRAM - Asynchronous Technology
4Mbit Memory Size
Parallel Memory Interface
10ns Write Cycle Time and Access Time
Quality and Safety Features
Operates Reliably in Extreme Temperature Conditions
Compliance with Industry Quality Standards
Compatibility
Surface Mount 44-TSOP II Package
Compatible with Various Microcontrollers and Processors
Application Areas
Consumer Electronics
Industrial Automation
Telecommunication Systems
Automotive Applications
Networking Devices
Product Lifecycle
Active Status
Current Technology with Support and Availability
Several Key Reasons to Choose This Product
Fast 10ns Access and Write Time for High-speed Operations
Suitable for Harsh Environment Applications due to Extended Temperature Range
Compatibility with a Broad Range of Supply Voltages
Industry Standard Packaging for Ease of Design and Integration
Long-Term Supplier Support as an Active Product
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