Manufacturer Part Number
BSZ100N06NSATMA1
Manufacturer
Infineon Technologies
Introduction
High-performance N-channel MOSFET with low on-resistance, optimized for high-efficiency power conversion applications
Product Features and Performance
Extremely low on-resistance for high efficiency
High current capability up to 40A
Very low gate charge for fast switching
Optimized for high-frequency applications
Robust and reliable design
Product Advantages
Improved energy efficiency
Reduced power losses
High power density
Reliable operation
Key Technical Parameters
Drain-to-Source Voltage (VDS): 60V
On-Resistance (RDS(on)): 10mΩ
Continuous Drain Current (ID): 40A
Gate-to-Source Voltage (VGS): ±20V
Operating Temperature: -55°C to 150°C
Input Capacitance (Ciss): 1075pF
Quality and Safety Features
Compliant with RoHS3 directive
Suitable for high-reliability applications
Robust design for increased lifespan
Compatibility
Compatible with a wide range of power conversion circuits and applications
Application Areas
Switch-mode power supplies
Motor drives
Inverters
Power factor correction
Lighting and industrial control
Product Lifecycle
This product is currently in active production
Replacement or upgrade options may be available in the future as technology evolves
Several Key Reasons to Choose This Product
Excellent energy efficiency and low power losses
High current capability and fast switching performance
Robust and reliable design for long-term operation
Compatibility with a wide range of power conversion applications
Compliance with stringent quality and safety standards