Manufacturer Part Number
BSZ110N08NS5ATMA1
Manufacturer
Infineon Technologies
Introduction
This is a N-Channel MOSFET transistor from the OptiMOS series manufactured by Infineon Technologies.
Product Features and Performance
80V Drain to Source Voltage (Vdss)
Maximum ±20V Gate to Source Voltage (Vgs)
11mOhm Max Drain-Source On-Resistance (Rds(on)) at 20A, 10V
40A Continuous Drain Current (Id) at 25°C
1300pF Max Input Capacitance (Ciss) at 40V
50W Max Power Dissipation at Tc
Operating Temperature Range: -55°C to 150°C
Product Advantages
Optimized for high-efficiency power conversion applications
Low on-resistance for improved efficiency
High power density and thermal performance
Key Technical Parameters
MOSFET Technology: N-Channel
Vgs(th) Max: 3.8V at 22A
Drive Voltage: 6V (Max Rds(on)), 10V (Min Rds(on))
Gate Charge (Qg) Max: 18.5nC at 10V
Quality and Safety Features
RoHS3 Compliant
Meets international quality and safety standards
Compatibility
Surface Mount Packaging: PG-TSDSON-8-FL
Application Areas
Switch-mode power supplies
Motor drives
DC/DC converters
Automotive electronics
Product Lifecycle
This product is an active and widely available part from Infineon.
Replacements and upgrades are readily available.
Key Reasons to Choose This Product
Optimized performance for high-efficiency power conversion
Low on-resistance for improved efficiency
High power density and thermal performance
Meets international quality and safety standards
Wide availability and compatibility
