Manufacturer Part Number
BSZ105N04NSG
Manufacturer
Infineon Technologies
Introduction
High-power N-channel MOSFET transistor for power switching applications
Product Features and Performance
Optimized for low on-resistance and fast switching
Wide operating temperature range of -55°C to 150°C
Low gate charge for efficient switching
High current capability up to 40A continuous drain current
Product Advantages
Excellent power efficiency and thermal performance
Fast switching speed for high-frequency applications
Reliable and robust design for demanding environments
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 40V
Maximum Gate-to-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 10.5mΩ @ 20A, 10V
Continuous Drain Current (Id): 11A (at 25°C), 40A (at case temperature)
Input Capacitance (Ciss): 1300pF @ 20V
Power Dissipation: 2.1W (at 25°C), 35W (at case temperature)
Quality and Safety Features
RoHS3 compliant
Robust package design for high reliability
Compatibility
Compatible with a wide range of power supply and control circuits
Application Areas
Switching power supplies
Motor drives
Industrial and consumer electronics
Product Lifecycle
This product is an active and widely used MOSFET in Infineon's OptiMOS3 series
Replacements and upgrades are likely to be available for the foreseeable future
Key Reasons to Choose This Product
Excellent power efficiency and thermal performance for high-power applications
Fast switching speed enabling high-frequency operation
Reliable and robust design for demanding environments
Wide operating temperature range for versatile use
Availability of technical support and long-term product lifecycle from a reputable manufacturer
