Manufacturer Part Number
BSZ110N06NS3GATMA1
Manufacturer
Infineon Technologies
Introduction
This product is a single N-channel MOSFET transistor from Infineon's OptiMOS series.
Product Features and Performance
60V drain-source voltage
20A continuous drain current at 25°C
11mΩ maximum on-resistance at 20A, 10V
-55°C to 150°C operating temperature range
Optimized for efficient power conversion and high-frequency switching applications
Product Advantages
Low on-resistance for high efficiency
High current handling capability
Wide temperature range for diverse applications
Compact surface-mount package
Key Technical Parameters
Drain-source voltage (Vdss): 60V
Maximum gate-source voltage (Vgs): ±20V
On-resistance (Rds(on)): 11mΩ @ 20A, 10V
Continuous drain current (Id): 20A @ 25°C
Input capacitance (Ciss): 2700pF @ 30V
Power dissipation: 2.1W @ 25°C, 50W @ 100°C
Quality and Safety Features
RoHS3 compliant
Designed and manufactured to high quality standards
Compatibility
This MOSFET is compatible with a wide range of power electronics applications, including:
Power supplies
Motor drives
Inverters
Switching regulators
Application Areas
High-frequency, high-efficiency power conversion
Industrial automation and control
Electric vehicle powertrains
Renewable energy systems
Product Lifecycle
The BSZ110N06NS3GATMA1 is an active and widely available product. Replacement or upgrade options may become available in the future as technology advances.
Key Reasons to Choose This Product
Excellent efficiency through low on-resistance
High current handling for robust performance
Wide temperature range for diverse applications
Compact surface-mount package for space-constrained designs
Proven reliability and quality from Infineon Technologies
