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Home Products Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single~~BSZ099N06LS5ATMA1~~

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BSZ099N06LS5ATMA1 - Infineon Technologies

Manufacturer Part Number: BSZ099N06LS5ATMA1

Manufacturer: Infineon Technologies

Allelco Part Number: 32D-BSZ099N06LS5ATMA1

ECAD Model

Parts Description: MOSFET N-CH 60V 46A TSDSON

Detailed Description

Package: 8-PowerTDFN

Data sheet: ~~BSZ099N06LS5ATMA1.pdf~~

RoHs Status: ROHS3 Compliant

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In stock: 114580

Specifications

BSZ099N06LS5ATMA1 Tech Specifications
Infineon Technologies - BSZ099N06LS5ATMA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies - BSZ099N06LS5ATMA1

Product Attribute	Attribute Value
Manufacturer	Infineon Technologies
Vgs(th) (Max) @ Id	2.3V @ 14µA
Vgs (Max)	±20V
Technology	MOSFET (Metal Oxide)
Supplier Device Package	PG-TSDSON-8-FL
Series	OptiMOS™
Rds On (Max) @ Id, Vgs	9.9mOhm @ 20A, 10V
Power Dissipation (Max)	36W (Tc)
Package / Case	8-PowerTDFN
Package	Tape & Reel (TR)

Product Attribute	Attribute Value
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Input Capacitance (Ciss) (Max) @ Vds	1300 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs	3.1 nC @ 4.5 V
FET Type	N-Channel
FET Feature	Standard
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Drain to Source Voltage (Vdss)	60 V
Current - Continuous Drain (Id) @ 25°C	46A (Tc)
Base Product Number	BSZ099

Parts Introduction

Manufacturer Part Number

BSZ099N06LS5ATMA1

Manufacturer

Infineon Technologies

Introduction

High-performance N-channel power MOSFET

Part of the OptiMOS series

Product Features and Performance

Wide operating temperature range: -55°C to 150°C

Low on-resistance: 9.9 mΩ @ 20A, 10V

High current capability: 46A continuous drain current @ 25°C

Low gate charge: 3.1 nC @ 4.5V

Low input capacitance: 1300 pF @ 30V

Product Advantages

Excellent thermal and electrical performance

Optimized for efficient power conversion

Suitable for a wide range of applications

Key Technical Parameters

Drain to Source Voltage (Vdss): 60V

Gate-Source Voltage (Vgs Max): ±20V

Thermal Resistance (Rth(j-c)): 3.5°C/W

Quality and Safety Features

RoHS3 compliant

Robust design for reliable operation

Compatibility

Surface mount package (PG-TSDSON-8-FL)

Suitable for Tape & Reel (TR) packaging

Application Areas

Switch-mode power supplies

Motor drives

Automotive electronics

Industrial applications

Product Lifecycle

Currently in active production

Replacement and upgrade options available

Key Reasons to Choose This Product

Exceptional power efficiency and thermal performance

Reliable and robust design for demanding applications

Wide range of operating conditions and compatibility

Part of the well-established OptiMOS series from Infineon

Parts with Similar Specifications

The three parts on the right have similar specifications to Infineon Technologies BSZ099N06LS5ATMA1

Product Attribute
Part Number	BSZ099N06LS5ATMA1	BSZ096N10LS5ATMA1	BSZ100N06NSATMA1	BSZ097N04LSGATMA1
Manufacturer	Infineon Technologies	Infineon Technologies	Infineon Technologies	Infineon Technologies
Package	Tape & Reel (TR)	Tape & Reel (TR)	Tape & Reel (TR)	Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C	46A (Tc)	40A (Tc)	40A (Tc)	12A (Ta), 40A (Tc)
Mounting Type	Surface Mount	Surface Mount	Surface Mount	Surface Mount
Supplier Device Package	PG-TSDSON-8-FL	PG-TSDSON-8-FL	PG-TSDSON-8-FL	PG-TSDSON-8
FET Type	N-Channel	N-Channel	N-Channel	N-Channel
FET Feature	Standard	Standard	-	-
Vgs(th) (Max) @ Id	2.3V @ 14µA	2.3V @ 36µA	3.3V @ 14µA	2V @ 14µA
Gate Charge (Qg) (Max) @ Vgs	3.1 nC @ 4.5 V	22 nC @ 10 V	15 nC @ 10 V	24 nC @ 10 V
Package / Case	8-PowerTDFN	8-PowerTDFN	8-PowerTDFN	8-PowerTDFN
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V	4.5V, 10V	6V, 10V	4.5V, 10V
Base Product Number	BSZ099	BSZ096	BSZ100	BSZ097
Rds On (Max) @ Id, Vgs	9.9mOhm @ 20A, 10V	9.6mOhm @ 20A, 10V	10mOhm @ 20A, 10V	9.7mOhm @ 20A, 10V
Series	OptiMOS™	OptiMOS™ 5	OptiMOS™	OptiMOS™
Input Capacitance (Ciss) (Max) @ Vds	1300 pF @ 30 V	2100 pF @ 50 V	1075 pF @ 30 V	1900 pF @ 20 V
Power Dissipation (Max)	36W (Tc)	69W (Tc)	2.1W (Ta), 36W (Tc)	2.1W (Ta), 35W (Tc)
Drain to Source Voltage (Vdss)	60 V	100 V	60 V	40 V
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Vgs (Max)	±20V	±20V	±20V	±20V
Operating Temperature	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)

BSZ099N06LS5ATMA1 Datasheet PDF

Download BSZ099N06LS5ATMA1 pdf datasheets and Infineon Technologies documentation for BSZ099N06LS5ATMA1 - Infineon Technologies.

Other Related Documents: Part Number Guide.pdf
PCN Packaging: Mult Dev Pkg Box Chg 3/Jan/2018.pdf Mult Dev Reel Design Chg 2/Dec/2019.pdf
PCN Assembly/Origin: Mult Dev Site Add 30/Oct/2020.pdf

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America	United States	5
America	Brazil	7
Europe	Germany	5
	United Kingdom	4
	Italy	5
Oceania	Australia	6
Oceania	New Zealand	5
Asia	India	4
Asia	Japan	4
Middle East	Israel	6

DHL & FedEx Shipment Charges Reference
Shipment charges(KG)	Reference DHL(USD$)
0.00kg-1.00kg	USD$30.00 - USD$60.00
1.00kg-2.00kg	USD$40.00 - USD$80.00
2.00kg-3.00kg	USD$50.00 - USD$100.00

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