Manufacturer Part Number
BSZ097N04LSGATMA1
Manufacturer
Infineon Technologies
Introduction
High-performance N-channel power MOSFET in a small PowerTDFN package, suitable for a wide range of power conversion and switching applications.
Product Features and Performance
Extremely low on-resistance for low conduction losses
Fast switching for high-frequency operation
Robust design with high avalanche energy capability
Wide operating temperature range of -55°C to 150°C
Product Advantages
Compact package size for space-constrained designs
High current handling capability up to 40A
Excellent thermal performance with low junction-to-case thermal resistance
Reliable and rugged design for demanding applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 40V
On-Resistance (Rds(on)): 9.7mΩ @ 20A, 10V
Continuous Drain Current (Id): 12A (Ta), 40A (Tc)
Input Capacitance (Ciss): 1900pF @ 20V
Power Dissipation: 2.1W (Ta), 35W (Tc)
Quality and Safety Features
RoHS3 compliant
Designed and manufactured to high quality standards
Compatibility
Compatible with a wide range of power conversion and switching applications, such as:
Switch-mode power supplies
Motor drives
Inverters
Power amplifiers
and more
Application Areas
Industrial electronics
Automotive electronics
Consumer electronics
Renewable energy systems
Product Lifecycle
This product is currently in active production and is not nearing discontinuation. Replacement or upgrade options may be available from Infineon Technologies.
Key Reasons to Choose This Product
Excellent power efficiency and thermal performance
High current handling capability in a compact package
Reliable and robust design for demanding applications
Compatible with a wide range of power conversion and switching applications
Backed by Infineon Technologies' expertise and quality standards
