Manufacturer Part Number
BSZ096N10LS5ATMA1
Manufacturer
Infineon Technologies
Introduction
Discrete Semiconductor Product
Transistor FET, MOSFET Single
Product Features and Performance
RoHS3 Compliant
8-PowerTDFN Package
OptiMOS 5 Series
Tape & Reel (TR) Packaging
Operating Temperature: -55°C to 150°C
Drain to Source Voltage (Vdss): 100V
Maximum Gate-Source Voltage (Vgs): ±20V
Max Drain-Source On-Resistance (Rds(on)): 9.6mΩ @ 20A, 10V
MOSFET Technology
Continuous Drain Current (Id): 40A @ 25°C
Input Capacitance (Ciss): 2100pF @ 50V
Standard FET Feature
Maximum Power Dissipation: 69W @ Tc
Product Advantages
Low on-resistance for high efficiency
Wide operating temperature range
High current capability
Key Technical Parameters
Drain to Source Voltage (Vdss): 100V
Maximum Gate-Source Voltage (Vgs): ±20V
Drain-Source On-Resistance (Rds(on)): 9.6mΩ
Continuous Drain Current (Id): 40A
Input Capacitance (Ciss): 2100pF
Threshold Voltage (Vgs(th)): 2.3V @ 36A
Gate Charge (Qg): 22nC @ 10V
Quality and Safety Features
RoHS3 Compliant
Compatibility
Surface Mount Mounting
Application Areas
High efficiency power conversion
Motor drives
Power supplies
Industrial applications
Product Lifecycle
Current product, no discontinuation planned
Upgrades and replacements available
Key Reasons to Choose
Low on-resistance for high efficiency
Wide operating temperature range
High current capability
RoHS compliance
Surface mount packaging