BSZ0909NDXTMA1 - Infineon Technologies

Manufacturer Part Number

BSZ0909NDXTMA1

Manufacturer

Infineon Technologies

Introduction

High-performance dual N-channel MOSFET in compact PG-WISON-8 package

Product Features and Performance

Optimized for efficient power conversion in various applications

Low on-resistance and fast switching behavior

Dual-channel design for compact and efficient power circuits

Extended operating temperature range of -55°C to 150°C

Product Advantages

Excellent thermal management and power density

Reliable and robust design for demanding applications

Flexible configuration options for system optimization

Key Technical Parameters

Drain to Source Voltage (Vdss): 30V

On-resistance (Rds(on)): 18mΩ @ 9A, 10V

Continuous Drain Current (Id): 20A @ 25°C

Input Capacitance (Ciss): 360pF @ 15V

Gate Charge (Qg): 2.6nC @ 4.5V

Quality and Safety Features

Compliant with RoHS3 directive

Reliable and robust design for long-term performance

Compatibility

Suitable for a wide range of power management and conversion applications

Application Areas

Power supplies

Motor drives

Industrial automation

Telecommunications equipment

Automotive electronics

Product Lifecycle

Current product, no discontinuation or replacement planned

Several Key Reasons to Choose This Product

Excellent power efficiency and thermal management

Compact and flexible design for space-constrained applications

Reliable and robust performance in demanding environments

Optimized for efficient power conversion in a variety of applications