Manufacturer Part Number
BSZ075N08NS5ATMA1
Manufacturer
Infineon Technologies
Introduction
Power MOSFET transistor with OptiMOS technology
Product Features and Performance
Low on-resistance for high efficiency
Fast switching for high-frequency applications
Withstands high drain-source voltages up to 80V
Wide operating temperature range of -55°C to 150°C
Product Advantages
Excellent thermal performance
Robust and reliable design
Optimized for high-power density applications
Key Technical Parameters
Drain-Source Voltage (Vdss): 80V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 7.5mΩ @ 20A, 10V
Continuous Drain Current (Id): 40A @ 25°C
Input Capacitance (Ciss): 2080pF @ 40V
Power Dissipation (Ptot): 69W @ Tc
Quality and Safety Features
RoHS3 compliant
Designed for high reliability and safety
Compatibility
Surface mount package (PG-TSDSON-8-26)
Application Areas
Switching power supplies
Motor drives
Hybrid and electric vehicles
Industrial automation
Product Lifecycle
Currently in production, no known discontinuation plans.
Key Reasons to Choose This Product
Low on-resistance for high efficiency
Fast switching for high-frequency applications
Wide operating temperature range
Excellent thermal performance
Robust and reliable design
