Manufacturer Part Number
BSZ086P03NS3GATMA1
Manufacturer
Infineon Technologies
Introduction
High-performance P-channel OptiMOS power MOSFET with low on-resistance and excellent switching performance.
Product Features and Performance
Low on-resistance (Rds(on) max: 8.6 mΩ @ 20 A, 10 V)
High drain current capability (Continuous drain current: 13.5 A at 25°C ambient, 40 A at 25°C case temperature)
Fast switching speed
Low gate charge (Qg max: 57.5 nC @ 10 V)
Wide operating temperature range (-55°C to 150°C)
Product Advantages
Efficient power conversion and control
Compact design
Reliable performance
Key Technical Parameters
Drain-to-source voltage (Vdss): 30 V
Gate-to-source voltage (Vgs max): ±25 V
Input capacitance (Ciss max): 4785 pF @ 15 V
Power dissipation (max): 2.1 W at 25°C ambient, 69 W at 25°C case temperature
Threshold voltage (Vgs(th) max): 3.1 V @ 105 A
Drive voltage (max Rds(on), min Rds(on)): 6 V, 10 V
Quality and Safety Features
RoHS3 compliant
Suitable for high-reliability applications
Compatibility
Compatible with various power electronic systems and circuits
Application Areas
Switch-mode power supplies
Motor drives
Industrial and consumer electronics
Telecommunication equipment
Product Lifecycle
This product is currently available and not nearing discontinuation.
Replacement or upgrade options may be available in the future.
Key Reasons to Choose This Product
Excellent power handling and efficiency
Fast and reliable switching performance
Compact and thermally efficient design
Wide operating temperature range
Suitable for high-reliability applications
