Manufacturer Part Number
BSZ0902NSATMA1
Manufacturer
Infineon Technologies
Introduction
Infineon's BSZ0902NSATMA1 is a high-performance N-channel MOSFET transistor designed for efficient power management applications.
Product Features and Performance
Operates at a wide temperature range of -55°C to 150°C
Low on-resistance of 2.6 mOhm at 20A and 10V
High continuous drain current of 19A at 25°C ambient and 40A at 25°C case temperature
Low input capacitance of 1700 pF at 15V
Maximum power dissipation of 2.1W at 25°C ambient and 48W at 25°C case temperature
Product Advantages
Excellent efficiency and thermal performance
Compact surface mount package
Suitable for high-current power management applications
Key Technical Parameters
Drain to Source Voltage (Vdss): 30V
Gate to Source Voltage (Vgs): ±20V
Threshold Voltage (Vgs(th)): 2V at 250A
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Gate Charge (Qg): 26 nC at 10V
Quality and Safety Features
RoHS3 compliant
Packaged in PG-TSDSON-8-FL surface mount package
Compatibility
This MOSFET is suitable for a wide range of power management applications, including DC-DC converters, motor drives, and power supplies.
Application Areas
Efficient power management in consumer electronics, industrial equipment, and automotive systems
High-current switching and control applications
Product Lifecycle
The BSZ0902NSATMA1 is an active product in Infineon's portfolio. No information is available on its discontinuation or replacement.
Key Reasons to Choose This Product
Excellent efficiency and thermal performance
High current handling capability
Compact surface mount package
Wide operating temperature range
RoHS3 compliance for environmental sustainability
