Manufacturer Part Number
BSZ086P03NS3EGATMA1
Manufacturer
Infineon Technologies
Introduction
High-Performance Single P-Channel MOSFET Transistor
Product Features and Performance
P-Channel MOSFET with low on-resistance for high efficiency
Optimized for high frequency switching applications
Excellent thermal and electrical performance
Suitable for a wide range of power management applications
Product Advantages
Compact surface mount package
Very low on-resistance for high efficiency
Robust design for reliable operation
Wide temperature range support
Key Technical Parameters
Drain to Source Voltage (Vdss): 30V
Vgs (Max): ±25V
Rds On (Max) @ Id, Vgs: 8.6mOhm @ 20A, 10V
Current Continuous Drain (Id) @ 25°C: 13.5A (Ta), 40A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4785 pF @ 15 V
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 3.1V @ 105A
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Gate Charge (Qg) (Max) @ Vgs: 57.5 nC @ 10 V
Quality and Safety Features
RoHS3 compliant
Robust and reliable design for industrial and automotive applications
Compatibility
Compatible with a wide range of power management and switching applications
Application Areas
Power supplies
Motor drives
Switch-mode power supplies
Industrial and automotive electronics
Product Lifecycle
Currently in production
Replacements and upgrades may be available in the future
Key Reasons to Choose This Product
Excellent thermal and electrical performance for high efficiency
Compact surface mount package for space-constrained designs
Robust design for reliable operation in harsh environments
Wide temperature range support for versatile applications