Manufacturer Part Number
BSZ0702LSATMA1
Manufacturer
Infineon Technologies
Introduction
The BSZ0702LSATMA1 is a high-performance N-channel MOSFET transistor from Infineon Technologies.
Product Features and Performance
60V drain-to-source voltage
Low on-resistance of 4mΩ @ 20A, 10V
Continuous drain current of 17A at 25°C ambient temperature and 40A at 25°C case temperature
Wide operating temperature range of -55°C to 150°C
Product Advantages
Excellent power efficiency due to low on-resistance
Robust design for high-reliability applications
Compact surface-mount package for space-constrained designs
Key Technical Parameters
Gate-to-source voltage (Vgs) range: ±20V
Input capacitance (Ciss): 3100pF @ 30V
Power dissipation: 2.1W at 25°C ambient, 69W at 25°C case temperature
Gate charge (Qg): 22nC @ 4.5V
Quality and Safety Features
RoHS3 compliant
Designed and manufactured to high-quality standards
Compatibility
Suitable for a wide range of power electronics applications, including motor drives, power supplies, and industrial automation
Application Areas
Industrial equipment
Power conversion and management
Automotive electronics
Consumer electronics
Product Lifecycle
Current product
Replacement and upgrade options available
Key Reasons to Choose This Product
Excellent performance-to-size ratio due to low on-resistance and compact package
Robust design for reliable operation in harsh environments
Efficient power conversion and management capabilities
Compatibility with a wide range of applications
BSZ067N06LS3INFINEO