Manufacturer Part Number
BSZ068N06NSATMA1
Manufacturer
Infineon Technologies
Introduction
High-performance N-channel MOSFET transistor in PowerTDFN package
Product Features and Performance
Optimized on-resistance and gate charge for high efficiency
Excellent thermal and electrical performance
Low gate charge for fast switching
PowerTDFN package enables high power density
Product Advantages
Efficient power conversion
Fast switching
Small form factor
Key Technical Parameters
60V drain-source voltage
8mΩ maximum on-resistance
40A continuous drain current
1500pF maximum input capacitance
-55°C to 150°C operating temperature range
Quality and Safety Features
RoHS3 compliant
AEC-Q101 qualified
Compatibility
Suitable for a variety of power conversion applications
Application Areas
Switch-mode power supplies
Motor drives
Lighting applications
Industrial and consumer electronics
Product Lifecycle
Currently in active production
Replacement or upgrade options available
Key Reasons to Choose
Optimized performance for high efficiency power conversion
Compact PowerTDFN package for space-constrained designs
Reliable operation across wide temperature range
Compliance with automotive and industrial quality standards
