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Home Products Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single~~BSZ068N06NSATMA1~~

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BSZ068N06NSATMA1 - Infineon Technologies

Manufacturer Part Number: BSZ068N06NSATMA1

Manufacturer: Infineon Technologies

Allelco Part Number: 32D-BSZ068N06NSATMA1

ECAD Model

Parts Description: MOSFET N-CH 60V 40A TSDSON

Detailed Description

Package: 8-PowerTDFN

Data sheet: ~~BSZ068N06NSATMA1.pdf~~

RoHs Status: ROHS3 Compliant

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In stock: 74320

Specifications

BSZ068N06NSATMA1 Tech Specifications
Infineon Technologies - BSZ068N06NSATMA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies - BSZ068N06NSATMA1

Product Attribute	Attribute Value
Manufacturer	Infineon Technologies
Vgs(th) (Max) @ Id	3.3V @ 20µA
Vgs (Max)	±20V
Technology	MOSFET (Metal Oxide)
Supplier Device Package	PG-TSDSON-8-FL
Series	OptiMOS™
Rds On (Max) @ Id, Vgs	6.8mOhm @ 20A, 10V
Power Dissipation (Max)	2.1W (Ta), 46W (Tc)
Package / Case	8-PowerTDFN
Package	Tape & Reel (TR)

Product Attribute	Attribute Value
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Input Capacitance (Ciss) (Max) @ Vds	1500 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs	21 nC @ 10 V
FET Type	N-Channel
FET Feature	-
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Drain to Source Voltage (Vdss)	60 V
Current - Continuous Drain (Id) @ 25°C	40A (Tc)
Base Product Number	BSZ068

Parts Introduction

Manufacturer Part Number

BSZ068N06NSATMA1

Manufacturer

Infineon Technologies

Introduction

High-performance N-channel MOSFET transistor in PowerTDFN package

Product Features and Performance

Optimized on-resistance and gate charge for high efficiency

Excellent thermal and electrical performance

Low gate charge for fast switching

PowerTDFN package enables high power density

Product Advantages

Efficient power conversion

Fast switching

Small form factor

Key Technical Parameters

60V drain-source voltage

8mΩ maximum on-resistance

40A continuous drain current

1500pF maximum input capacitance

-55°C to 150°C operating temperature range

Quality and Safety Features

RoHS3 compliant

AEC-Q101 qualified

Compatibility

Suitable for a variety of power conversion applications

Application Areas

Switch-mode power supplies

Motor drives

Lighting applications

Industrial and consumer electronics

Product Lifecycle

Currently in active production

Replacement or upgrade options available

Key Reasons to Choose

Optimized performance for high efficiency power conversion

Compact PowerTDFN package for space-constrained designs

Reliable operation across wide temperature range

Compliance with automotive and industrial quality standards

Parts with Similar Specifications

The three parts on the right have similar specifications to Infineon Technologies BSZ068N06NSATMA1

Product Attribute
Part Number	BSZ068N06NSATMA1	BSZ067N06LS3GATMA1	BSZ084N08NS5ATMA1	BSZ075N08NS5ATMA1
Manufacturer	Infineon Technologies	Infineon Technologies	Infineon Technologies	Infineon Technologies
Series	OptiMOS™	OptiMOS™	OptiMOS™	OptiMOS™
Drain to Source Voltage (Vdss)	60 V	60 V	80 V	80 V
Power Dissipation (Max)	2.1W (Ta), 46W (Tc)	2.1W (Ta), 69W (Tc)	63W (Tc)	69W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)
Package / Case	8-PowerTDFN	8-PowerVDFN	8-PowerTDFN	8-PowerTDFN
Input Capacitance (Ciss) (Max) @ Vds	1500 pF @ 30 V	5100 pF @ 30 V	1820 pF @ 40 V	2080 pF @ 40 V
FET Feature	-	-	-	-
Base Product Number	BSZ068	BSZ067	BSZ084	BSZ075
Gate Charge (Qg) (Max) @ Vgs	21 nC @ 10 V	67 nC @ 10 V	25 nC @ 10 V	29.5 nC @ 10 V
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V	4.5V, 10V	6V, 10V	6V, 10V
Supplier Device Package	PG-TSDSON-8-FL	PG-TSDSON-8	PG-TSDSON-8-FL	PG-TSDSON-8-26
Vgs (Max)	±20V	±20V	±20V	±20V
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Package	Tape & Reel (TR)	Tape & Reel (TR)	Tape & Reel (TR)	Tape & Reel (TR)
Vgs(th) (Max) @ Id	3.3V @ 20µA	2.2V @ 35µA	3.8V @ 31µA	3.8V @ 36µA
Rds On (Max) @ Id, Vgs	6.8mOhm @ 20A, 10V	6.7mOhm @ 20A, 10V	8.4mOhm @ 20A, 10V	7.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C	40A (Tc)	14A (Ta), 20A (Tc)	40A (Tc)	40A (Tc)
Mounting Type	Surface Mount	Surface Mount	Surface Mount	Surface Mount
FET Type	N-Channel	N-Channel	N-Channel	N-Channel

BSZ068N06NSATMA1 Datasheet PDF

Download BSZ068N06NSATMA1 pdf datasheets and Infineon Technologies documentation for BSZ068N06NSATMA1 - Infineon Technologies.

Other Related Documents: Part Number Guide.pdf
PCN Packaging: Mult Dev Pkg Box Chg 3/Jan/2018.pdf Mult Dev Reel Design Chg 2/Dec/2019.pdf
PCN Assembly/Origin: Mult Dev Site Add 30/Oct/2020.pdf

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America	United States	5
America	Brazil	7
Europe	Germany	5
	United Kingdom	4
	Italy	5
Oceania	Australia	6
Oceania	New Zealand	5
Asia	India	4
Asia	Japan	4
Middle East	Israel	6

DHL & FedEx Shipment Charges Reference
Shipment charges(KG)	Reference DHL(USD$)
0.00kg-1.00kg	USD$30.00 - USD$60.00
1.00kg-2.00kg	USD$40.00 - USD$80.00
2.00kg-3.00kg	USD$50.00 - USD$100.00

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