Manufacturer Part Number
BSC123N08NS3GATMA1
Manufacturer
Infineon Technologies
Introduction
This is a discrete semiconductor product, specifically a single N-Channel MOSFET transistor.
Product Features and Performance
80V Drain-Source Voltage
-55°C to 150°C Operating Temperature Range
3mΩ Maximum On-Resistance at 33A, 10V
11A Continuous Drain Current at 25°C Ambient
55A Continuous Drain Current at 25°C Case
1870pF Maximum Input Capacitance at 40V
5W Power Dissipation at 25°C Ambient
66W Power Dissipation at 25°C Case
Product Advantages
High current and power handling capabilities
Low on-resistance for efficient power conversion
Wide operating temperature range
Compact surface mount package
Key Technical Parameters
N-Channel MOSFET
80V Drain-Source Voltage
20V Maximum Gate-Source Voltage
3mΩ Maximum On-Resistance
55A Continuous Drain Current
Quality and Safety Features
RoHS3 Compliant
Tape and Reel Packaging
Compatibility
Suitable for a wide range of power conversion and control applications.
Application Areas
Power supplies
Motor drives
Lighting control
Industrial automation
Automotive electronics
Product Lifecycle
This product is an active and in-production part from Infineon Technologies. Replacements and upgrades may be available.
Key Reasons to Choose This Product
High current and power handling capabilities
Low on-resistance for efficient power conversion
Wide operating temperature range
Compact surface mount package
RoHS compliance
Availability in standard tape and reel packaging
