Manufacturer Part Number
BSC120N03LSGATMA1
Manufacturer
Infineon Technologies
Introduction
High-performance N-channel MOSFET transistor with low on-resistance and high switching speed for power conversion applications.
Product Features and Performance
Low on-resistance for high efficiency
High current capability up to 39A
Fast switching speed for high-frequency operation
Low input capacitance for high-speed switching
Wide operating temperature range of -55°C to 150°C
Product Advantages
Excellent power efficiency
High power density
Reliable performance
Versatile applications
Key Technical Parameters
Drain to source voltage (Vdss): 30V
Gate-source voltage (Vgs): ±20V
On-resistance (Rds(on)): 12mΩ @ 30A, 10V
Continuous drain current (Id): 12A (Ta), 39A (Tc)
Input capacitance (Ciss): 1200pF @ 15V
Power dissipation: 2.5W (Ta), 28W (Tc)
Quality and Safety Features
RoHS3 compliant
Reliable and robust design
Compatibility
Suitable for a wide range of power conversion applications, including DC-DC converters, motor drives, and power supplies.
Application Areas
Power management and conversion
Motor control
Industrial electronics
Consumer electronics
Product Lifecycle
Current product offering
Replacements or upgrades may be available in the future
Key Reasons to Choose This Product
Excellent power efficiency and performance
High current capability and fast switching speed
Reliable and robust design
Wide operating temperature range
Versatile applications
