Manufacturer Part Number
BSC120N03MSGATMA1
Manufacturer
Infineon Technologies
Introduction
Advanced N-Channel MOSFET with optimized on-resistance and high-speed switching performance
Product Features and Performance
30V Drain-Source Voltage (Vdss)
12mΩ maximum on-resistance (Rds(on)) at 30A, 10V
11A continuous drain current (Id) at 25°C case temperature
1500pF maximum input capacitance (Ciss) at 15V
5W power dissipation at 25°C ambient temperature, 28W at 25°C case temperature
Wide operating temperature range of -55°C to 150°C
Product Advantages
Optimized on-resistance and switching performance for efficient power conversion
Compact 8-PowerTDFN package for high power density designs
Excellent thermal dissipation capabilities
Key Technical Parameters
Drain-Source Voltage (Vdss): 30V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 12mΩ @ 30A, 10V
Continuous Drain Current (Id): 11A @ 25°C (Ta), 39A @ 25°C (Tc)
Input Capacitance (Ciss): 1500pF @ 15V
Power Dissipation: 2.5W @ 25°C (Ta), 28W @ 25°C (Tc)
Quality and Safety Features
RoHS3 compliant
AEC-Q101 qualified for automotive applications
Compatibility
Suitable for a wide range of power conversion, motor control, and switching applications
Application Areas
Power supplies
Motor drives
Inverters
DC-DC converters
General-purpose switching
Product Lifecycle
Currently in production
No plans for discontinuation at this time
Replacement or upgraded models may become available in the future
Several Key Reasons to Choose This Product
Optimized performance for efficient power conversion
Compact packaging for high power density designs
Excellent thermal dissipation capabilities
RoHS3 compliance and AEC-Q101 qualification for automotive applications
Suitable for a wide range of power conversion and switching applications
